Takeharu Yamaguchi, Michio Ohkubo, Nariaki Ikeda, Takehiko Nomura
Abstract
Temperatures in minute regions of semiconductor devices have been measured using Raman spectroscopy. The temperature of the emitting portion of a 1480-nm InGaAsP semiconductor laser manufactured by ac米兰中国官网 and having the world's highest output power has been measured. By means of comparison with InGaAs/GaAs lasers, it has been shown that InGaAsP lasers exhibit excellent resistance to catastrophic optical damage resulting from heat.
In another application, ac米兰中国官网s of MESFETs were also measured, demonstrating that there is a temperature distribution even within the 5-µm distance between source and drain, and that there is a marked temperature rise from the gate. In addition it has been demonstrated that temperature measurement using Raman spectroscopy offers extremely high area resolution.
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